Grain-Boundary Melting Transition in an Atomistic Simulation Model

Tue Nguyen, Paul S. Ho, Thomas Kwok, Cynthia Nitta, and Sidney Yip
Phys. Rev. Lett. 57, 1919 – Published 13 October 1986
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Abstract

Molecular-dynamics simulations on the structure and energy of a bicrystal model reveal an interfacial melting transition at a temperature distinctly lower than bulk melting. Below the transition, thermal disorder occurs but interfacial width remains essentially unchanged; above the transition, the interfacial region behaves like a melt while its width grows significantly with temperature.

  • Received 19 May 1986

DOI:https://doi.org/10.1103/PhysRevLett.57.1919

©1986 American Physical Society

Authors & Affiliations

Tue Nguyen1, Paul S. Ho2, Thomas Kwok2, Cynthia Nitta1, and Sidney Yip1

  • 1Department of Nuclear Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
  • 2IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598

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Issue

Vol. 57, Iss. 15 — 13 October 1986

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