Interatomic Potentials for Silicon Structural Energies

R. Biswas and D. R. Hamann
Phys. Rev. Lett. 55, 2001 – Published 4 November 1985
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Abstract

We develop two- and three-body classical interatomic potentials that model structural energies for silicon. These potentials provide a global fit to a data base of first-principles calculations of the energy for bulk and surface silicon structures which spans a wide range of atomic coordinations and bonding geometries. This is accomplished by use of a new "separable" form for the three-body potential that reduces the three-body energy to a product of two-body sums and leads to computations of the energy and atomic forces in n2 steps as opposed to n3 for a general three-body potential.

  • Received 21 June 1985

DOI:https://doi.org/10.1103/PhysRevLett.55.2001

©1985 American Physical Society

Authors & Affiliations

R. Biswas and D. R. Hamann

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

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Issue

Vol. 55, Iss. 19 — 4 November 1985

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