Resistance fluctations in submicrometer narrow Si inversion layers are studied over a wide range of temperatures and electron concentrations. Thermally activated switching on and off of discrete resistance increments is observed, caused by the capture and emission of individual electrons at strategically located scatterers (interface traps). The traps have a broad distribution of activation energies, as assumed in accounting for $\frac{1}{f}$ noise in larger devices.

• Received 4 August 1983

DOI:https://doi.org/10.1103/PhysRevLett.52.228