Determination of the Fine-Structure Constant Using GaAs-AlxGa1xAs Heterostructures

D. C. Tsui, A. C. Gossard, B. F. Field, M. E. Cage, and R. F. Dziuba
Phys. Rev. Lett. 48, 3 – Published 4 January 1982
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Abstract

The fine-structure constant α has been determined from precision measurements of quantized Hall resistances RH of three different GaAs-AlxGa1xAs heterostructures. The result, α1=137.035968(23) (0.17 ppm), is in excellent agreement with the 0.11-ppm value obtained from the gyromagnetic ratio of the proton, γp, and 2eh via the Josephson effect. Our RH value can be combined with γp and 2eh to yield a more accurate value of α1 independent of the ohm: α1=137.035965(12) (0.089 ppm).

  • Received 2 November 1981

DOI:https://doi.org/10.1103/PhysRevLett.48.3

©1982 American Physical Society

Authors & Affiliations

D. C. Tsui and A. C. Gossard

  • Bell Laboratories, Murray Hill, New Jersey 07974

B. F. Field, M. E. Cage, and R. F. Dziuba

  • Electrical Measurements and Standards Division, Center for Absolute Physical Quantities, National Bureau of Standards, Washington, D. C. 20234

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Vol. 48, Iss. 1 — 4 January 1982

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