A predictive relation between reacted interface width and heat of interface reaction is presented for III-V—compound-semiconductor-metal interfaces. Soft-x-ray photoemission measurements reveal that the thickness of chemically reacted species and the extent and stoichiometry of atomic interdiffusion are determined by the strength and nature of metal-semiconductor bonding. Chemical bond strength directly influences the macroscopic electronic properties as shown by transport measurements.

• Received 18 December 1980

DOI:https://doi.org/10.1103/PhysRevLett.46.838