Abstract
A discussion of some of the difficulties with previous analyses of the resistivity of compounds is given. Precise high-temperature data on -particle- and electron-damaged Ge and Sn samples with different defect concentrations are presented here and analyzed in a simple way with use of a phenomenological model based on the idea that the ideal resistivity must approach some limiting value in the regime where the mean free path becomes comparable to the interatomic spacing.
- Received 20 October 1976
DOI:https://doi.org/10.1103/PhysRevLett.38.782
©1977 American Physical Society