Simple Model for Characterizing the Electrical Resistivity in A15 Superconductors

H. Wiesmann, M. Gurvitch, H. Lutz, A. Ghosh, B. Schwarz, Myron Strongin, P. B. Allen, and J. W. Halley
Phys. Rev. Lett. 38, 782 – Published 4 April 1977
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Abstract

A discussion of some of the difficulties with previous analyses of the resistivity of A15 compounds is given. Precise high-temperature data on α-particle- and electron-damaged Nb3Ge and Nb3Sn samples with different defect concentrations are presented here and analyzed in a simple way with use of a phenomenological model based on the idea that the ideal resistivity must approach some limiting value in the regime where the mean free path becomes comparable to the interatomic spacing.

  • Received 20 October 1976

DOI:https://doi.org/10.1103/PhysRevLett.38.782

©1977 American Physical Society

Authors & Affiliations

H. Wiesmann*, M. Gurvitch, H. Lutz, A. Ghosh, B. Schwarz, and Myron Strongin

  • Brookhaven National Laboratory, Upton, New York 11973

P. B. Allen§

  • State University of New York at Stony Brook, Stony Brook, New York 11790

J. W. Halley

  • University of Minnesota, Minneapolis, Minnesota 55440

  • *Also at Department of Materials Science, State University of New York at Stony Brook, Stony Brook, N. Y. 11790.
  • Also at Physics Department, State University of New York at Stony Brook, Stony Brook, N. Y. 11790.
  • Also at Physics Department, Cornell University, Ithaca, N. Y. 14850.
  • §Work supported in part by National Science Foundation Grant No. DMR 73-07578A01; currently on leave at Physics Department, University of California, Berkeley, Calif. 94708 until June 1977.

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Vol. 38, Iss. 14 — 4 April 1977

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