Optically Induced Localized Paramagnetic States in Amorphous Semiconductors

S. G. Bishop, U. Strom, and P. C. Taylor
Phys. Rev. Lett. 36, 543 – Published 8 March 1976
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Abstract

In addition to the previously reported paramagnetic hole center localized on the chalcogen, a conjugate optically induced electron center localized on an As atom is observed in glassy As2S3 and As2Se3. The chalcogen center is further identified as a hole localized in a nonbonding p orbital. These optically induced centers are unique to the amorphous phase, and their density saturates at or below 1017 spins/cm3.

  • Received 20 November 1975

DOI:https://doi.org/10.1103/PhysRevLett.36.543.2

©1976 American Physical Society

Authors & Affiliations

S. G. Bishop, U. Strom, and P. C. Taylor

  • Naval Research Laboratory, Washington, D. C. 20375

Original Article

Optically Induced Localized Paramagnetic States in Chalcogenide Glasses

S. G. Bishop, U. Strom, and P. C. Taylor
Phys. Rev. Lett. 34, 1346 (1975)

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Vol. 36, Iss. 10 — 8 March 1976

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