Semiconductor Surface Reconstruction: The Rippled Geometry of GaAs(110)

A. R. Lubinsky; C. B. Duke; B. W. Lee; P. Mark

doi:10.1103/PhysRevLett.36.1058

Semiconductor Surface Reconstruction: The Rippled Geometry of GaAs(110)

A. R. Lubinsky, C. B. Duke, B. W. Lee, and P. Mark

Phys. Rev. Lett. 36, 1058 – Published 26 April 1976

Abstract

Extension of analyses of low-energy-electron-diffraction intensities to encompass structure determination of low-index semiconductor surfaces reveals that GaAs(110) is reconstructed. The As atoms protrude from the surface whereas the Ga atoms are displaced inward such that no nearest-neighbor bond lengths are altered.

Received 24 December 1975

DOI:https://doi.org/10.1103/PhysRevLett.36.1058

Authors & Affiliations

A. R. Lubinsky and C. B. Duke

Webster Research Center, Xerox Corporation, 800 Phillips Road, Webster, New York 14580

B. W. Lee and P. Mark^*

Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08540

^*Supported by the National Science Foundation (GK 38575), the U. S. Office of Naval Research (N00014-75-C-0394), and the U. S. Army Research Office (DAHC-04-74-G0133).