Electron-Electron Scattering in TiS2

A. H. Thompson
Phys. Rev. Lett. 35, 1786 – Published 29 December 1975
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Abstract

The a-axis, temperature-dependent electrical resistivity of high-purity, stoichiometric TiS2 is proportional to T2 from at least 10 to 400 K. This unique behavior is apparently caused by electron-electron scattering.

  • Received 15 October 1975

DOI:https://doi.org/10.1103/PhysRevLett.35.1786

©1975 American Physical Society

Authors & Affiliations

A. H. Thompson

  • Corporate Research Laboratory, Exxon Research & Engineering Company, Linden, New Jersey 07036

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Issue

Vol. 35, Iss. 26 — 29 December 1975

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