Strong Coupling Superconductivity, Pseudogap, and Mott Transition

G. Sordi, P. Sémon, K. Haule, and A.-M. S. Tremblay
Phys. Rev. Lett. 108, 216401 – Published 23 May 2012

Abstract

An intricate interplay between superconductivity, pseudogap, and Mott transition, either bandwidth driven or doping driven, occurs in materials. Layered organic conductors and cuprates offer two prime examples. We provide a unified perspective of this interplay in the two-dimensional Hubbard model within cellular dynamical mean-field theory on a 2×2 plaquette and using the continuous-time quantum Monte Carlo method as impurity solver. Both at half filling and at finite doping, the metallic normal state close to the Mott insulator is unstable to d-wave superconductivity. Superconductivity can destroy the first-order transition that separates the pseudogap phase from the overdoped metal, yet that normal state transition leaves its marks on the dynamic properties of the superconducting phase. For example, as a function of doping one finds a rapid change in the particle-hole asymmetry of the superconducting density of states. In the doped Mott insulator, the dynamical mean-field superconducting transition temperature Tcd does not scale with the order parameter when there is a normal-state pseudogap. Tcd corresponds to the local pair formation temperature observed in tunneling experiments and is distinct from the pseudogap temperature.

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  • Received 23 January 2012

DOI:https://doi.org/10.1103/PhysRevLett.108.216401

© 2012 American Physical Society

Authors & Affiliations

G. Sordi1, P. Sémon2, K. Haule3, and A.-M. S. Tremblay2,4

  • 1Theory Group, Institut Laue Langevin, 6 rue Jules Horowitz, 38042 Grenoble Cedex, France
  • 2Département de physique and Regroupement québéquois sur les matériaux de pointe, Université de Sherbrooke, Sherbrooke, Québec, Canada J1K 2R1
  • 3Department of Physics & Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA
  • 4Canadian Institute for Advanced Research, Toronto, Ontario, Canada, M5G 1Z8

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Issue

Vol. 108, Iss. 21 — 25 May 2012

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