Role of Confinement on Diffusion Barriers in Semiconductor Nanocrystals

Tzu-Liang Chan, Alexey T. Zayak, Gustavo M. Dalpian, and James R. Chelikowsky
Phys. Rev. Lett. 102, 025901 – Published 15 January 2009

Abstract

We find that quantum size effects not only play an important role in the electronic properties of defects in semiconductor nanocrystals, but also strongly affect the incorporation of defect atoms into the nanocrystals. In particular, using ab initio methods based on density functional theory, we predict that Mn defects will be energetically driven towards the surface of CdSe and ZnSe nanocrystals, and that the diffusion barrier of a Mn interstitial defect in a CdSe nanocrystal will be significantly lower than that in the bulk.

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  • Received 8 July 2008

DOI:https://doi.org/10.1103/PhysRevLett.102.025901

©2009 American Physical Society

Authors & Affiliations

Tzu-Liang Chan1, Alexey T. Zayak1, Gustavo M. Dalpian2, and James R. Chelikowsky1,3

  • 1Center for Computational Materials, Institute for Computational Engineering and Sciences, University of Texas at Austin, Austin, Texas 78712, USA
  • 2Centro de Ciências Naturais e Humanas, Universidade Federal do ABC, Santo André São Paulo, Brazil
  • 3Departments of Physics and Chemical Engineering, University of Texas at Austin, Austin, Texas 78712, USA

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Issue

Vol. 102, Iss. 2 — 16 January 2009

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