Effect of the Rashba splitting on the RKKY interaction in topological-insulator thin films

Mahroo Shiranzaei, Hosein Cheraghchi, and Fariborz Parhizgar
Phys. Rev. B 96, 024413 – Published 12 July 2017

Abstract

We investigate the effect of Rashba splitting on the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in a topological-insulator (TI) thin film both at finite and zero chemical potential. We show that the spin susceptibility of the TI thin film depends strongly on the direction of the distance vector between impurities. In addition to the well-known Heisenberg-, Ising-, and Dzyaloshinskii-Moria (DM)-like terms reported before in TIs, we find another term in the off-diagonal part of the spin-susceptibility tensor which is symmetric in contrast to the DM term. Furthermore, we show how one can tune the RKKY interaction by using electric field applied perpendicularly to the surface plane of the TI, where in the presence of such a field the RKKY interaction can be enhanced drastically for small chemical doping. We present our results for two different situations, namely intersurface pairing of magnetic impurities as well as intrasurface pairing. The behavior of these two situations is completely different, which we describe by mapping the density of states of each surface on the band dispersion.

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  • Received 6 February 2017
  • Revised 20 May 2017

DOI:https://doi.org/10.1103/PhysRevB.96.024413

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Mahroo Shiranzaei1, Hosein Cheraghchi1,*, and Fariborz Parhizgar2,†

  • 1School of Physics, Damghan University, P.O. Box 36716-41167, Damghan, Iran
  • 2School of Physics, Institute for Research in Fundamental Sciences (IPM), Tehran 19395-5531, Iran

  • *cheraghchi@du.ac.ir
  • fariborz.parhizgar@ipm.ir

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Vol. 96, Iss. 2 — 1 July 2017

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