Micromagnetic modeling of critical current oscillations in magnetic Josephson junctions

I. A. Golovchanskiy, V. V. Bol'ginov, V. S. Stolyarov, N. N. Abramov, A. Ben Hamida, O. V. Emelyanova, B. S. Stolyarov, M. Yu. Kupriyanov, A. A. Golubov, and V. V. Ryazanov
Phys. Rev. B 94, 214514 – Published 21 December 2016

Abstract

In this work we propose and explore an effective numerical approach for investigation of critical current dependence on applied magnetic field for magnetic Josephson junctions with in-plane magnetization orientation. This approach is based on micromagnetic simulation of the magnetization reversal process in the ferromagnetic layer with introduced internal magnetic stiffness and subsequent reconstruction of the critical current value using total flux or reconstructed actual phase difference distribution. The approach is flexible and shows good agreement with experimental data obtained on Josephson junctions with ferromagnetic barriers. Based on this approach we have obtained a critical current dependence on applied magnetic field for rectangular magnetic Josephson junctions with high size aspect ratio. We have shown that the rectangular magnetic Josephson junctions can be considered for application as an effective Josephson magnetic memory element with the value of critical current defined by the orientation of magnetic moment at zero magnetic field. An impact of shape magnetic anisotropy on critical current is revealed and discussed. Finally, we have considered a curling magnetic state in the ferromagnetic layer and demonstrated its impact on critical current.

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  • Received 28 September 2016
  • Revised 29 November 2016

DOI:https://doi.org/10.1103/PhysRevB.94.214514

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied PhysicsInterdisciplinary Physics

Authors & Affiliations

I. A. Golovchanskiy1,2, V. V. Bol'ginov2,3, V. S. Stolyarov1,3,4,5, N. N. Abramov2, A. Ben Hamida2, O. V. Emelyanova6, B. S. Stolyarov5,7, M. Yu. Kupriyanov1,4,8, A. A. Golubov1,9, and V. V. Ryazanov2,3,4,*

  • 1Moscow Institute of Physics and Technology, State University, 9 Institutskiy per., Dolgoprudny, Moscow Region 141700, Russia
  • 2National University of Science and Technology MISIS, 4 Leninsky prosp., Moscow 119049, Russia
  • 3Institute of Solid State Physics (ISSP RAS), Chernogolovka, Moscow Region 142432, Russia
  • 4Solid State Physics Department, Kazan Federal University, 420008 Kazan, Russia
  • 5Faculty of Fundamental Physical and Chemical Engineering, M. V. Lomonosov Moscow State University, 1 Leninskie Gory, GSP-1, Moscow 119991, Russia
  • 6National Research Nuclear University MEPhI, 31 Kashirskoye sh., Moscow 115409, Russia
  • 7Scientific Production Enterprise Factor-TS, 11a 1st Magistralniy proezd, Moscow 123290, Russia
  • 8M. V. Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics (SINP MSU), 1(2) Leninskie Gory, GSP-1, Moscow 119991, Russia
  • 9Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The Netherlands

  • *Corresponding author: ryazanov@issp.ac.ru

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Issue

Vol. 94, Iss. 21 — 1 December 2016

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