Modeling the structure of amorphous tetrahedrally coordinated semiconductors. I

G. A. N. Connell and R. J. Temkin
Phys. Rev. B 9, 5323 – Published 15 June 1974
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Abstract

A continuous random network (CRN) consisting of 238 tetrahedrally coordinated atoms has been constructed so as to contain only even-membered rings. The structural properties of the model (density, bond-length distribution, bond-angle distribution, dihedral-angle distribution, radial distribution function) are in satisfactory agreement with experimental results for amorphous Ge, Si, and the III-V compounds. The present model eliminates the conflict between the Polk CRN model, which contains approximately 50% of odd-membered rings, and experimental photoemission, optical, and heat-of-crystallization results for the amorphous III-V's, which indicate the absence of a significant number of such rings. Comparison of the CRN models suggests that a determination of the experimental dihedral-angle distribution of each material is very important for a unique definition of its structure.

  • Received 15 January 1974

DOI:https://doi.org/10.1103/PhysRevB.9.5323

©1974 American Physical Society

Authors & Affiliations

G. A. N. Connell and R. J. Temkin*

  • Harvard University, Cambridge, Massachusetts 02138

  • *IBM Postdoctoral Fellow.

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Issue

Vol. 9, Iss. 12 — 15 June 1974

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