Use of orthogonalized-plane-wave bands and wave functions in the calculation of acoustic deformation potentials

J. L. Ivey
Phys. Rev. B 9, 4281 – Published 15 May 1974
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Abstract

The scattering of electrons by acoustic phonons in an InSb-like semiconductor has been shown previously to be influenced strongly by the symmetry of the electronic wave function near the conduction-band minimum. In this work we show how to extract values of the acoustic "deformation potentials" ε0, ε1, and ε2 from the self-consistent relativistic orthogonalized-plane-wave claculations for InSb and InAs. With their use one can compute the energy dependence of the electronic scattering.

  • Received 16 November 1973

DOI:https://doi.org/10.1103/PhysRevB.9.4281

©1974 American Physical Society

Authors & Affiliations

J. L. Ivey*

  • Aerospace Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433

  • *N. A. S. -N. R. C. Postdoctoral Research Associate.

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Issue

Vol. 9, Iss. 10 — 15 May 1974

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