Spin-split silicon states at step edges of Si(553)-Au

K. Biedermann, S. Regensburger, Th. Fauster, F. J. Himpsel, and S. C. Erwin
Phys. Rev. B 85, 245413 – Published 6 June 2012

Abstract

The quasi-one-dimensional Si(553)-Au surface is investigated with time-resolved two-photon photoemission and laser-based photoemission. Several occupied and unoccupied states inside and outside the bulk band gap of silicon were found near the center of the surface Brillouin zone. A nondispersing unoccupied state 0.62 eV above the Fermi level with a lifetime of 125 fs matches the spin-split silicon step-edge state predicted by density functional theory calculations. Two occupied bands can be associated with the bands calculated for nonpolarized step-edge atoms.

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  • Received 13 April 2012

DOI:https://doi.org/10.1103/PhysRevB.85.245413

©2012 American Physical Society

Authors & Affiliations

K. Biedermann, S. Regensburger, and Th. Fauster

  • Lehrstuhl für Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstraße 7, 91058 Erlangen, Germany

F. J. Himpsel

  • Department of Physics, University of Wisconsin–Madison, 1150 University Avenue, Madison, Wisconsin 53706, USA

S. C. Erwin

  • Center for Computational Materials Science, Naval Research Laboratory, Washington, DC 20375, USA

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Vol. 85, Iss. 24 — 15 June 2012

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