X-ray induced insulator-metal transition in a thin film of electron-doped VO2

K. Shibuya, D. Okuyama, R. Kumai, Y. Yamasaki, H. Nakao, Y. Murakami, Y. Taguchi, T. Arima, M. Kawasaki, and Y. Tokura
Phys. Rev. B 84, 165108 – Published 10 October 2011

Abstract

We have observed a persistent x-ray induced insulator-metal transition at low temperature for an epitaxial film of electron-doped VO2, a material as characterized by strong electron-electron and electron-lattice interactions. The volume fraction of the photo-generated metallic patches, ranging from 0 to 100% of the whole film, can be scaled well with the total dose of x-ray irradiation, irrespective of the x-ray intensity. This indicates the monomolecular process of the insulator-metal phase conversion that corresponds to the instantaneous creation of the metallic patch extending over as many as 105 V sites per one x-ray absorbed photon. The typical percolation behavior is observed in the conductivity change with the finely photo-controlled volume ratio of the metallic phase.

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  • Received 20 August 2011

DOI:https://doi.org/10.1103/PhysRevB.84.165108

©2011 American Physical Society

Authors & Affiliations

K. Shibuya1,*, D. Okuyama1, R. Kumai2, Y. Yamasaki3, H. Nakao3, Y. Murakami3, Y. Taguchi1, T. Arima4,5, M. Kawasaki1,6,7, and Y. Tokura1,7,8

  • 1Cross-correlated Materials Research Group (CMRG) and Correlated Electron Research Group (CERG), RIKEN Advanced Science Institute (ASI), Wako 351-0198, Japan
  • 2Photonics Research Institute, AIST, Tsukuba 305-8562, Japan
  • 3Condensed Matter Research Center and Photon Factory, Institute of Materials Structure Science, KEK, Tsukuba 305-0801, Japan
  • 4Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
  • 5RIKEN SPring-8 Center, Sayo 679-5148, Japan
  • 6WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
  • 7Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan
  • 8Multiferroics Project, ERATO, Japan Science and Technology Agency (JST), Tokyo 113-8656, Japan

  • *k.shibuya@riken.jp

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Vol. 84, Iss. 16 — 15 October 2011

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