EPR study of carbon and silicon related defects in carbon-rich hydrogenated amorphous silicon-carbon films

E. N. Kalabukhova, S. N. Lukin, D. V. Savchenko, B. D. Shanina, A. V. Vasin, V. S. Lysenko, A. N. Nazarov, A. V. Rusavsky, J. Hoentsch, and Y. Koshka
Phys. Rev. B 81, 155319 – Published 22 April 2010

Abstract

Three paramagnetic defects were revealed in amorphous hydrogenated carbon-rich silicon-carbon alloy films (a-Si0.3C0.7:H). Two of them were attributed to silicon (Si) dangling bonds (Si DBs) and carbon-related defects (CRDs). The third defect, based on its g-value and linewidth, was tentatively attributed to a bulk Si DB defect bonded with nitrogen atoms in Si-N2Si configuration. The effect of thermal vacuum annealing on the properties of the a-Si0.3C0.7:H films was studied in the temperature range of Tann=400950°C. A strong increase in CRD concentration was observed in high temperature annealed a-Si0.3C0.7:H films, which was explained by hydrogen effusion process occurred at Tann above 400°C. The increase in the concentration of the CRDs is accompanied by the exchange narrowing of its electron paramagnetic resonance (EPR) linewidth due to the formation of carbon clusters having ferromagnetic ordering. The temperature dependent g-factor anisotropies observed at Q-band and D-band frequencies for the CRD signal in the samples annealed at high temperature (950°C) were explained by the presence of graphitelike sp2-coordinated carbon clusters and demagnetization field (shape-dependent anisotropy term). The demagnetizing field Bdem=4πMs, where Ms is the sample magnetization, was found to be equal to 0.44 mT at 37 GHz and 1.1 mT at 140 GHz. Analysis of the temperature dependences of the integral intensities of the SiDB and CRD EPR signals has shown that they do not obey the Curie-Weiss law, and their spin systems exhibit superparamagnetic and ferromagnetic properties, respectively.

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  • Received 22 June 2009

DOI:https://doi.org/10.1103/PhysRevB.81.155319

©2010 American Physical Society

Authors & Affiliations

E. N. Kalabukhova1, S. N. Lukin1, D. V. Savchenko1, B. D. Shanina1, A. V. Vasin1, V. S. Lysenko1, A. N. Nazarov1, A. V. Rusavsky1, J. Hoentsch2, and Y. Koshka3

  • 1V. E. Lashkaryov Institute of Semiconductor Physics, NASU, Prospect Nauki 45, 03028 Kiev, Ukraine
  • 2Faculty of Physics and Earth Sciences, Institute of Experimental Physics II, Leipzig University, Linnéstrasse 5, D-04103 Leipzig, Germany
  • 3Department of Electrical and Computer Engineering, Mississippi State University, P.O. Box 9571, Mississippi 39762, USA

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Issue

Vol. 81, Iss. 15 — 15 April 2010

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