Abstract
We analyze the band structure of a silicon nanotube with bonds and variable bond lengths. This nanotube has many similarities with a carbon nanotube including a band gap at half-filling and conducting behavior which is dependent on structure. We derive a simple formula which predicts when the nanotube is metallic. We discuss our results in the context of a nanotube subject to small applied strains as this provides a means of distorting bond lengths in a predictable way and may be tested experimentally. The effects of strain on nanotube conductance have important implications for sensor technology.
- Received 6 April 2009
DOI:https://doi.org/10.1103/PhysRevB.79.233401
©2009 American Physical Society