Analyticity of the phase shift and reflectivity of electrons at a metal-semiconductor interface

D. A. Ricci, Y. Liu, T. Miller, and T.-C. Chiang

Phys. Rev. B 79, 195433 – Published 27 May 2009

Abstract

The reflection phase shift and reflectivity as a function of electron energy at a metal-semiconductor interface are analytically related. Specifically, conjugate van Hove-type singularities are expected near a semiconductor band edge. These fundamental relations are investigated for the Pb-Si(111) interface by angle-resolved photoemission measurements of thin Pb films on Si(111) as quantum wells. A detailed determination of the reflectivity and phase shift of the Pb valence electrons across the Si valence-band edge is facilitated by using submonolayer amounts of Au as an interfactant to systematically adjust the interface potential.

Received 17 February 2009

DOI:https://doi.org/10.1103/PhysRevB.79.195433

Authors & Affiliations

D. A. Ricci, Y. Liu^*,†, T. Miller, and T.-C. Chiang^*,‡

Department of Physics, University of Illinois at Urbana–Champaign, 1110 West Green Street, Urbana, Illinois 61801-3080, USA
Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana–Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801-2902, USA

^*Corresponding authors.
^†yangliu3@illinois.edu
^‡tcchiang@illinois.edu

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Issue

Vol. 79, Iss. 19 — 15 May 2009

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