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Spatially resolved low-frequency noise measured by atomic force microscopy

Lynda Cockins, Yoichi Miyahara, and Peter Grutter
Phys. Rev. B 79, 121309(R) – Published 31 March 2009

Abstract

We report spatially resolved charge noise measurements on semiconductor samples by atomic force microscopy. We observed charge noise induced by light illumination on an InP/InGaAs heterostructure with surface InAs quantum dots and a buried two-dimensional electron gas. The observed noise exhibits generation-recombination noise or random telegraph noise depending on light intensity and bias voltage. A spatial resolution better than 20 nm was demonstrated by comparing the noise on and off the InAs quantum dots. The approach enables the localization of individual traps and will aid in understanding noise mechanisms.

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  • Received 23 January 2009

DOI:https://doi.org/10.1103/PhysRevB.79.121309

©2009 American Physical Society

Authors & Affiliations

Lynda Cockins, Yoichi Miyahara*, and Peter Grutter

  • Department of Physics, McGill University, 3600 rue University, Montreal, Canada H3A 2T8

  • *Corresponding author. miyahara@physics.mcgill.ca

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Issue

Vol. 79, Iss. 12 — 15 March 2009

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