Polaron relaxation and hopping conductivity in LaMn1xFexO3

A. Karmakar, S. Majumdar, and S. Giri
Phys. Rev. B 79, 094406 – Published 6 March 2009

Abstract

dc and ac transport properties as well as electric modulus spectra have been investigated for the samples LaMn1xFexO3 with compositions 0x1.0. The bulk dc resistivity shows a temperature variation consistent with the variable range hopping mechanism at low temperature and Arrhenius mechanism at high temperatures. The ac conductivity has been found to follow a power-law behavior at a limited temperature and frequency region where Anderson localization plays a significant role in the transport mechanism for all the compositions. At low temperatures large dc resistivity and dielectric relaxation behavior for all the compositions are consistent with the polaronic nature of the charge carriers. Scaling of the modulus spectra shows that the charge transport dynamics is independent of temperature for a particular composition but depends strongly on different compositions possibly due to different charge carrier concentrations and structural properties.

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  • Received 20 October 2008

DOI:https://doi.org/10.1103/PhysRevB.79.094406

©2009 American Physical Society

Authors & Affiliations

A. Karmakar, S. Majumdar, and S. Giri*

  • Department of Solid State Physics and Center for Advanced Materials, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India

  • *sspsg2@iacs.res.in

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Issue

Vol. 79, Iss. 9 — 1 March 2009

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