Abstract
We present evidence for hole injection into quantum wells near a polar surface of (001). As the surface is brought in proximity to the layer, an exponential drop in resistance and a decreasing positive Seebeck coefficient are observed below a characteristic coupling length of 10–15 unit cells. We attribute this behavior to a crossover from an atomic reconstruction of the -terminated surface to an electronic reconstruction of the vanadium valence. These results suggest a general approach to tunable hole doping in oxide thin-film heterostructures.
- Received 28 April 2008
DOI:https://doi.org/10.1103/PhysRevB.79.075415
©2009 American Physical Society
Viewpoint
Playing with the geometry of oxide heterostructures
Published 9 February 2009
Researchers bring the prospect of new electronic devices based on oxide materials closer to reality by doping interfaces via polar discontinuities rather than chemical substitution.
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