We analyze the electronic properties of a simple stacking defect in Bernal graphite. We show that a bound state forms, which disperses as ${\left|\mathit{k}-\mathit{K}\right|}^3$, in the vicinity of either of the two inequivalent zone corners $\mathit{K}$. In the presence of a strong $c$-axis magnetic field, this bound state develops a Landau-level structure which for low energies behaves as $E_n\propto {\left|nB\right|}^{3/2}$. We show that buried stacking faults have observable consequences for surface spectroscopy, and we discuss the implications for the three-dimensional quantum Hall effect (3DQHE). We also analyze the Landau-level structure and chiral surface states of rhombohedral graphite and show that, when doped, it should exhibit multiple 3DQHE plateaus at modest fields.

• Received 23 September 2008

DOI:https://doi.org/10.1103/PhysRevB.78.245416