Hole g factors in GaAs quantum dots from the angular dependence of the spin fine structure

I. Toft and R. T. Phillips
Phys. Rev. B 76, 033301 – Published 2 July 2007

Abstract

We have studied the spin fine structure of neutral and negatively charged excitons in interfacial quantum dots in GaAs quantum wells. By rotating the sample in magnetic fields up to 9T, we have been able to study in detail the in-plane g factor for holes, which is 0.09±0.02 for the charged exciton and 0.0±0.02 for the neutral exciton in a 2nm well.

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  • Received 3 November 2006

DOI:https://doi.org/10.1103/PhysRevB.76.033301

©2007 American Physical Society

Authors & Affiliations

I. Toft and R. T. Phillips

  • Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom

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Vol. 76, Iss. 3 — 15 July 2007

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