Decomposition of SiH3 to SiH2 on Si(100)-(2×1)

Freda C. H. Lim, E. S. Tok, and H. Chuan Kang
Phys. Rev. B 74, 205333 – Published 28 November 2006

Abstract

The decomposition energetics of the silyl group into silylene and hydrogen on the Si(100)-(2×1) surface was studied using pseudopotential density functional calculations. The results provided insight on the relative stability of the adsorption configurations of silylene in the presence of different coverages of coadsorbed hydrogen. We find that the prevalence of the intrarow silylene on the growth surface is a result of both thermodynamics and kinetics. Our results also suggest that both the silylene group and the hydrogen atom formed by silyl decomposition acquire frustrated translational energy in the exit valley of the decomposition pathway. In particular, the hydrogen atom is approximately 0.5eV more energetic than the thermal energy. This is consistent with observations made in scanning tunnel microscope images that show the dissociating hydrogen atom migrating away from the decomposition site.

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  • Received 10 May 2006

DOI:https://doi.org/10.1103/PhysRevB.74.205333

©2006 American Physical Society

Authors & Affiliations

Freda C. H. Lim1, E. S. Tok2, and H. Chuan Kang1,*

  • 1Department of Chemistry, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Singapore
  • 2Department of Physics, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Singapore

  • *Corresponding author. Email address: chmkhc@nus.edu.sg

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Vol. 74, Iss. 20 — 15 November 2006

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