Multivalley transport and the integer quantum Hall effect in a PbTe quantum well

V. A. Chitta, W. Desrat, D. K. Maude, B. A. Piot, N. F. Oliveira, Jr., P. H. O. Rappl, A. Y. Ueta, and E. Abramof
Phys. Rev. B 72, 195326 – Published 17 November 2005

Abstract

We report magnetotransport measurements performed on a 10 nm n-type PbTePb0.9Eu0.1Te quantum well grown on a BaF2 substrate. In contrast to previous work, both the Hall and longitudinal resistances show a clearly defined signature of the integer quantum Hall effect with no sign of parallel conduction. Due to the large carrier density, the occupation of two longitudinal subbands and one oblique valley subband leads to an unusual sequence of filling factors.

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  • Received 23 June 2005

DOI:https://doi.org/10.1103/PhysRevB.72.195326

©2005 American Physical Society

Authors & Affiliations

V. A. Chitta1, W. Desrat2, D. K. Maude2, B. A. Piot2, N. F. Oliveira, Jr.1, P. H. O. Rappl3, A. Y. Ueta3, and E. Abramof3

  • 1Instituto de Fisica, Universidade de São Paulo, CP 66318, 05315-970 São Paulo, SP, Brazil
  • 2Grenoble High Magnetic Field Laboratory, CNRS, Boîte Postale 166, 38042 Grenoble Cedex 9, France
  • 3Laboratório Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, CP 515, 12201-970 São José dos Campos, SP, Brazil

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Issue

Vol. 72, Iss. 19 — 15 November 2005

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