Single-electron transistor backaction on the single-electron box

B. A. Turek, K. W. Lehnert, A. Clerk, D. Gunnarsson, K. Bladh, P. Delsing, and R. J. Schoelkopf

Phys. Rev. B 71, 193304 – Published 26 May 2005

Abstract

We report an experimental observation of the backaction of a single-electron transistor (SET) measuring the Coulomb staircase of a single-electron box. As current flows through the SET, the charge state of the SET island fluctuates. These fluctuations capacitively couple to the box and cause changes in the position, width, and asymmetry of the Coulomb staircase. A sequential tunneling model accurately recreates these effects, confirming this mechanism of the backaction of a SET. This is a first step toward understanding the effects of quantum measurement on solid-state qubits.

Received 21 February 2005

DOI:https://doi.org/10.1103/PhysRevB.71.193304

Authors & Affiliations

B. A. Turek¹, K. W. Lehnert¹, A. Clerk¹, D. Gunnarsson², K. Bladh², P. Delsing², and R. J. Schoelkopf¹

¹Department of Applied Physics and Department of Physics, Yale University, New Haven, Connecticut 06511, USA
²Microtechnology Center at Chalmers MC2, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Goteborg University, SE-412 96 Goteborg, Sweden

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Vol. 71, Iss. 19 — 15 May 2005

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covering condensed matter and materials physics