Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons

A. I. Tartakovskii, M. N. Makhonin, I. R. Sellers, J. Cahill, A. D. Andreev, D. M. Whittaker, J-P. R. Wells, A. M. Fox, D. J. Mowbray, M. S. Skolnick, K. M. Groom, M. J. Steer, H. Y. Liu, and M. Hopkinson
Phys. Rev. B 70, 193303 – Published 5 November 2004

Abstract

The fine structure splitting of bright exciton states is measured for a range of thermally annealed InGaAs quantum dot (QD) samples with differing degrees of InGa intermixing and also for a dot-in-a-well (DWELL) structure. Magnitudes of the fine structure splitting are determined in polarization-resolved differential transmission experiments from measurements of the period of quantum beats observed in QD exciton dynamics. The splitting is found to decrease in structures with weaker strain: both for InGa intermixed QD’s and also in dots surrounded by strain-reducing layers (DWELL’s). Our findings pave the way to the achievement of entangled two photon sources based on emission from individual QD’s, currently prevented since the fine structure splitting is larger than the radiative linewidth.

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  • Received 9 June 2004

DOI:https://doi.org/10.1103/PhysRevB.70.193303

©2004 American Physical Society

Authors & Affiliations

A. I. Tartakovskii1, M. N. Makhonin1,2, I. R. Sellers1, J. Cahill1, A. D. Andreev3, D. M. Whittaker1, J-P. R. Wells1, A. M. Fox1, D. J. Mowbray1, M. S. Skolnick1, K. M. Groom4, M. J. Steer4, H. Y. Liu4, and M. Hopkinson4

  • 1Department of Physics and Astronomy, University of Sheffield, S3 7RH, United Kingdom
  • 2Institute of Solid State Physics, Chernogolovka, 142432, Russia
  • 3Advanced Technology Institute, University of Surrey, Guildford, Surrey, United Kingdom
  • 4Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom

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Issue

Vol. 70, Iss. 19 — 15 November 2004

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