Polariton lasing by exciton-electron scattering in semiconductor microcavities

G. Malpuech, A. Kavokin, A. Di Carlo, and J. J. Baumberg
Phys. Rev. B 65, 153310 – Published 1 April 2002
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Abstract

The relaxation bottleneck present in the dispersion relation of exciton polaritons in semiconductor microcavities has prevented the realization of low threshold lasing based on exciton-polariton condensation. Here we show theoretically that the introduction of a cold electron gas into such structures induces efficient electron-polariton scattering. This process allows the condensation of the polaritons accumulated at the bottleneck to the final emitting state with a transition time of a few picoseconds, opening the way to a new generation of low-threshold light-emitting devices.

  • Received 20 December 2001

DOI:https://doi.org/10.1103/PhysRevB.65.153310

©2002 American Physical Society

Authors & Affiliations

G. Malpuech1,3, A. Kavokin2, A. Di Carlo1, and J. J. Baumberg3

  • 1INFM-Department of Electrical Engineering, University of Rome “Tor Vergata”, Via di Tor Vergata 110-I-00133 Roma, Italy
  • 2LASMEA, CNRS-Universite Clermont-II “Blaise Pascal” 24 Avenue des Landais, 63177 Aubiere Cedex, France
  • 3Department of Physics & Astronomy, University of Southampton, SO17 1BJ Southampton, United Kingdom

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Vol. 65, Iss. 15 — 15 April 2002

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