Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots

X. Z. Liao; J. Zou; D. J. H. Cockayne; J. Wan; Z. M. Jiang; G. Jin; Kang L. Wang

doi:10.1103/PhysRevB.65.153306

Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots

X. Z. Liao, J. Zou, D. J. H. Cockayne, J. Wan, Z. M. Jiang, G. Jin, and Kang L. Wang

Phys. Rev. B 65, 153306 – Published 27 March 2002

Abstract

Ge(Si)/Si(001) quantum dots produced by gas-source molecular beam epitaxy at 575 °C were investigated using energy-filtering transmission electron microscopy and x-ray energy dispersive spectrometry. Results show a nonuniform composition distribution in the quantum dots with the highest Ge content at the dot center. The average Ge content in the quantum dots is much higher than in the wetting layer. The quantum dot/substrate interface has been moved to the substrate side. A growth mechanism of the quantum dots is discussed based on the composition distribution and interfacial structures.

Received 2 October 2001

DOI:https://doi.org/10.1103/PhysRevB.65.153306

Authors & Affiliations

X. Z. Liao^1,2,*, J. Zou¹, D. J. H. Cockayne³, J. Wan⁴, Z. M. Jiang^4,5, G. Jin⁴, and Kang L. Wang⁴

¹Australian Key Center for Microscopy & Microanalysis, The University of Sydney, Sydney NSW 2006, Australia
²Division of Materials Science and Technology, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
³Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, England
⁴Device Research Laboratory, Electrical Engineering Department, University of California at Los Angeles, Los Angeles, California 90095-1594
⁵Surface Physics Laboratory, Fudan University, Shanghai 200433, China

^*Electronic address: xzliao@lanl.gov

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Vol. 65, Iss. 15 — 15 April 2002

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