An ab initio calculation of the ideal tensile strength of β-silicon nitride

Shigenobu Ogata, Naoto Hirosaki, Cenk Kocer, and Hiroshi Kitagawa
Phys. Rev. B 64, 172102 – Published 16 October 2001
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Abstract

In this study, the ideal strength of β-silicon nitride was calculated using a first-principles molecular dynamics method. The stress-strain curve of β-silicon nitride was calculated from simulations of uniaxial extension in the [100] and [001] axial directions, and an ideal tensile strength of ∼72.2 and ∼75.0 GPa, respectively, was obtained. In addition, the elastic constants were determined, along the two principle axial directions, [100] and [001], and values of ∼559 and ∼403 GPa, respectively, were obtained. The elastic constant results were found to be in reasonable agreement with existing data.

  • Received 12 April 2001

DOI:https://doi.org/10.1103/PhysRevB.64.172102

©2001 American Physical Society

Authors & Affiliations

Shigenobu Ogata

  • Department of Mechanical Engineering and Systems, Graduate School of Osaka University, 2-1 Yamada-oka, Suita-shi, Osaka 565-0871, Japan

Naoto Hirosaki and Cenk Kocer

  • Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba-Shi Ibaraki 305-0044, Japan

Hiroshi Kitagawa

  • Department of Adaptive Machine Systems, Graduate School of Osaka University, 2-1 Yamada-oka, Suita-shi, Osaka 565-0871, Japan

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Issue

Vol. 64, Iss. 17 — 1 November 2001

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