Zeeman effect of electronic Raman lines of acceptors in elemental semiconductors: Boron in blue diamond

Hyunjung Kim, Zdenka Barticevic, A. K. Ramdas, S. Rodriguez, M. Grimsditch, and T. R. Anthony
Phys. Rev. B 62, 8038 – Published 15 September 2000
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Abstract

The Zeeman effect of the electronic Raman transition from 1s(p3/2):Γ8 to the 1s(p1/2):Γ7 spin-orbit partner (Δ) of boron acceptors in diamond is studied with magnetic field B along [001], [111], or [110]. As many as eight Zeeman components of Δ and, in addition, four Raman lines ascribed to transitions between the Zeeman sublevels of Γ8 [Raman–electron-paramagnetic-resonance (Raman-EPR) transitions] are observed with the polarizations expected from the polarizability tensors that characterize them. These tensors are formulated in terms of γ1,γ2, and γ3, the Luttinger parameters characterizing the p3/2 and p1/2 valence band maxima. The selection rules and relative intensities of the Zeeman components and of the Raman-EPR lines, observed in diverse polarization configurations and scattering geometries, have led to determination of (1) the assignments of magnetic quantum numbers; (2) the level ordering of the Zeeman sublevels, or, equivalently, the magnitudes and signs of g1 and g2, the orbital and spin g factors of the acceptor-bound hole; (3) the extreme mass anisotropy as reflected in the ratio (γ2/γ3)=0.08±0.01. Magnetic-field-induced mixing of zero field states, time reversal symmetry, and the diamagnetic contributions that characterize the different sublevels are fully taken into account in the interpretation of the experimental results. These include the striking mutual exclusion of the Stokes spectrum from its anti-Stokes counterpart in specific polarization configurations.

  • Received 12 April 2000

DOI:https://doi.org/10.1103/PhysRevB.62.8038

©2000 American Physical Society

Authors & Affiliations

Hyunjung Kim*, Zdenka Barticevic, A. K. Ramdas, and S. Rodriguez

  • Department of Physics, Purdue University, West Lafayette, Indiana 47907-1396

M. Grimsditch

  • Argonne National Laboratory, Argonne, Illinois 60439

T. R. Anthony

  • General Electric Company Corporate Research and Development, Schenectady, New York 12309

  • *Present address: Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439.
  • Permanent address: Departamento de Física, Universidad Técnica Federico Santa María, Casilla 110-V, Valparaíso, Chile.

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Issue

Vol. 62, Iss. 12 — 15 September 2000

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