Electronic structure of ZnGeP2: A detailed study of the band structure near the fundamental gap and its associated parameters

Sukit Limpijumnong, Walter R. L. Lambrecht, and Benjamin Segall
Phys. Rev. B 60, 8087 – Published 15 September 1999
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Abstract

Full-potential linear muffin-tin orbital band-structure calculations of ZnGeP2 in the local-density approximation (LDA) indicate several close-lying conduction-band minima at different points in the Brillouin zone. Quasiparticle results available for the zinc-blende “parent” compound GaP are used to estimate corrections beyond the LDA. Even including these corrections, ZnGeP2 appears to be truly indirect rather than pseudodirect, as has been suggested in the literature. The experimental evidence is reviewed. The standard assignment of features in optical data pertaining to the absorption edge is questioned and a tentative new interpretation is presented in light of our multiple conduction-band minima model. Related band-structure parameters, such as band-gap deformation potentials, effective masses at each of the minima, and the valence-band effective Hamiltonian are determined.

  • Received 8 April 1999

DOI:https://doi.org/10.1103/PhysRevB.60.8087

©1999 American Physical Society

Authors & Affiliations

Sukit Limpijumnong, Walter R. L. Lambrecht, and Benjamin Segall

  • Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106-7079

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Issue

Vol. 60, Iss. 11 — 15 September 1999

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