Electrical resistivity of a thin metallic film

Horacio E. Camblong and Peter M. Levy
Phys. Rev. B 60, 15782 – Published 15 December 1999
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Abstract

The electrical resistivity of a pure sample of a thin metallic film is found to depend on the boundary conditions. This conclusion is supported by a free-electron model calculation and confirmed by an ab initio relativistic Korringa-Kohn-Rostoker computation. The low-temperature resistivity is found to be zero for a free-standing film (reflecting boundary conditions) but nonzero when the film is sandwiched between two semi-infinite samples of the same material (outgoing boundary conditions). In the latter case, this resistivity scales inversely with the number of monolayers and is due to the background diffusive scattering by a finite lattice.

  • Received 19 July 1999

DOI:https://doi.org/10.1103/PhysRevB.60.15782

©1999 American Physical Society

Authors & Affiliations

Horacio E. Camblong

  • Department of Physics, University of San Francisco, San Francisco, California 94117

Peter M. Levy

  • Department of Physics, New York University, New York, New York 10003

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Vol. 60, Iss. 23 — 15 December 1999

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