Abstract
Group-theoretical techniques are used to deduce the selection rules, energy splittings, and relative intensities of the Zeeman components of the electric dipole absorption lines , , and of an acceptor in a group-IV semiconductor. Results are obtained for three different orientations of the magnetic field with respect to the crystal axes: , , and . For a transition the relative intensities for are expressed in terms of two real parameters, which are essentially ratios of matrix elements of the electric-dipole-moment operator. The relative intensities for and depend on energy splittings as well. When terms quadratic in are important, the relative intensities for become dependent on . The results obtained are quite general, being based on symmetry considerations alone. They are applicable to an impurity located at a site of tetrahedral symmetry, provided that the Zeeman splitting of a given level is small in comparison with its distance from the nearest zero-field level. Our treatment proves particularly useful for studying acceptor states in group-IV semiconductors. As an example, we discuss the case of boron impurity in germanium.
- Received 19 June 1972
DOI:https://doi.org/10.1103/PhysRevB.6.3836
©1972 American Physical Society