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Observation of a phase transition from the T phase to the H phase induced by a STM tip in 1TTaS2

Ju-Jin Kim, Chan Park, W. Yamaguchi, O. Shiino, K. Kitazawa, and T. Hasegawa
Phys. Rev. B 56, R15573(R) – Published 15 December 1997
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Abstract

We have fabricated an Hphase TaS2 crystal in the surface layer of a Tphase TaS2 single crystal using a scanning tunneling microscope (STM) tip. After applying a relatively high bias voltage to the STM tip, we observed a significant change of the surface indicating the formation of the H phase near the exposed region. The STM image shows the characteristic triangular phase boundary between the original T phase (13×13 charge-density-wave superstructure) and the newly fabricated H phase (a triangular atomic lattice). Around the phase boundary, the local distortions of the 13×13 charge-density-wave superstructure have also been observed. The high-resolution STM image near the phase boundary suggests a sliding of the surface S atomic sheet by the STM modification procedure.

  • Received 30 June 1997

DOI:https://doi.org/10.1103/PhysRevB.56.R15573

©1997 American Physical Society

Authors & Affiliations

Ju-Jin Kim and Chan Park

  • Department of Physics, Chonbuk National University, Chonju 561-756, Korea

W. Yamaguchi, O. Shiino, and K. Kitazawa

  • Department of Applied Chemistry, University of Tokyo, Hongo, Tokyo 113, Japan

T. Hasegawa

  • Materials and Structures Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama 226, Japan

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Issue

Vol. 56, Iss. 24 — 15 December 1997

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