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Filling-factor dependence of the negatively-charged-exciton absorption in a CdTe quantum well

S. Lovisa, R. T. Cox, N. Magnea, and K. Saminadayar
Phys. Rev. B 56, R12787(R) – Published 15 November 1997
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Abstract

The absorption transition that creates the negatively charged exciton (X) in a two-dimensional electron gas is studied as a function of electron density ne and of magnetic field in a CdTe/Cd0.83Zn0.09Mg0.08Te quantum well. The sample is grown on a transparent substrate allowing transmission measurements. The density is varied from zero to 3×1011 cm2 by applying a voltage between a gold Schottky contact on the sample surface and an Ohmic back contact. In fixed high magnetic field (8 T), the variation of the X absorption intensity has a triangular shape: It first increases linearly with ne, reaches a maximum at Landau level filling factor ν=1, then decreases approximately linearly with ne to disappear at ν2. This is explained in a model that gives an X absorption intensity proportional to the number of electrons in the lowest Landau level (degeneracy 2g) when 0<ν<1, but proportional to 2gne, that is to the number of holes in this level, when 1<ν<2.

  • Received 17 June 1997

DOI:https://doi.org/10.1103/PhysRevB.56.R12787

©1997 American Physical Society

Authors & Affiliations

S. Lovisa, R. T. Cox, N. Magnea, and K. Saminadayar

  • Département de Recherche Fondamentale sur la Matière Condensée, CEA/Grenoble, 17, avenue des Martyrs, 38054 Grenoble Cedex 9, France

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Vol. 56, Iss. 20 — 15 November 1997

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