We demonstrate the use of maximum entropy based deconvolution to reconstruct boron spatial distribution from the secondary ion mass spectrometry (SIMS) depth profiles on a system of variously spaced boron δ layers grown in silicon. Sample-independent response functions are obtained using a new method that reduces the danger of incorporating real sample behavior in the response. Although the original profiles of different primary ion energies appear quite differently, the reconstructed distributions agree well with each other. The depth resolution in the reconstructed data is increased significantly and segregation of boron at the near surface side of the δ layers is clearly shown.

• Received 11 July 1997

DOI:https://doi.org/10.1103/PhysRevB.56.15167