Abstract
We report a remarkable symmetry between the resistivity and conductivity on opposite sides of the B=0 metal-insulator transition in a two-dimensional electron gas in high-mobility silicon metal-oxide-semiconductor field-effect transistors. This symmetry implies that the transport mechanisms on the two sides are related.
DOI:https://doi.org/10.1103/PhysRevB.55.R13421
©1997 American Physical Society