Polarization dependence of two-photon absorption and electronic Raman scattering intensitiesin crystals

An-Dien Nguyen
Phys. Rev. B 55, 5786 – Published 1 March 1997
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Abstract

A formalism using the properties of the irreducible representation of the scattering tensors has been developed to predict up to the third order the polarization-dependent behavior of the electronic Raman-scattering intensities and the two-photon absorption intensities of transitions between Stark levels. The polarization behavior of ions in crystals are tabulated for the 32 crystallographic point groups. The theory provides a stringent test for the Judd-Ofelt-Axe theory for two-photon intensities between Stark levels.

    DOI:https://doi.org/10.1103/PhysRevB.55.5786

    ©1997 American Physical Society

    Authors & Affiliations

    An-Dien Nguyen

    • Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
    • and Department of Physics, University of California, Berkeley, California 94720

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    Issue

    Vol. 55, Iss. 9 — 1 March 1997

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