Highly optimized tight-binding model of silicon

Thomas J. Lenosky, Joel D. Kress, Inhee Kwon, Arthur F. Voter, Byard Edwards, David F. Richards, Sang Yang, and James B. Adams
Phys. Rev. B 55, 1528 – Published 15 January 1997
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Abstract

We have fit an orthogonal tight-binding model of silicon with a minimal (s,p) basis and a repulsive pair potential. The pair potential and the tight-binding matrix elements are represented as cubic splines with a 5.24-Å fixed radial cutoff in order to allow maximum flexibility. Using a numerical procedure, the spline parameters were fit to simultaneously optimize agreement with ab initio force and energy data on clusters, liquid, and amorphous systems as well as experimental elastic constants, phonon frequencies, and Grüneisen parameter values. Many such fits were performed to obtain a potential that we judged to be optimal, within the implicit limitations of our potential form. The resulting optimized potential describes many properties very accurately and should be a useful model given its relative simplicity and speed. Our fitting method is not difficult to apply and should be applicable to many other systems.

    DOI:https://doi.org/10.1103/PhysRevB.55.1528

    ©1997 American Physical Society

    Authors & Affiliations

    Thomas J. Lenosky, Joel D. Kress, Inhee Kwon, and Arthur F. Voter

    • Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545

    Byard Edwards

    • Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853-2501

    David F. Richards, Sang Yang, and James B. Adams

    • Department of Material Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801

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    Issue

    Vol. 55, Iss. 3 — 15 January 1997

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