A quantitative analysis of the temperature dependence (40–300 K) of the photothermal reflectance signal on crystalline and phosphorus implanted silicon wafers is presented. A theoretical model has been adapted for the interpretation of experimental results concerning photothermal measurements as a function of temperature. The quantitative analysis of the temperature dependence of the photothermal reflectance signal on crystalline and implanted silicon wafers at various doses led to a nondestructive evaluation of their optical, electronic, and thermal properties in a wide temperature range.

• Received 5 December 1994

DOI:https://doi.org/10.1103/PhysRevB.51.14115