The phenomena of Schottky barrier creation in ${\mathrm{RbAg}}_4$${\mathrm{I}}_5$ are studied. Luminescence with high spatial resolution is used as a tool for investigation of the process on the blocking-electrode–solid-electrolyte boundary. The profile of the distribution of electronic centers near the contact region is measured. The presence of electrons and ions in the depletion region at the interface between the ${\mathrm{RbAg}}_4$${\mathrm{I}}_5$ and the graphite electrode is established and interpreted within the framework of the modified Schottky model. It is shown that the small concentration of electrons determines the extent of the depletion region. The kinetics of the creation of Schottky barriers is measured and described by taking into account the presence of self-trapped electrons and mobile silver ions in ${\mathrm{RbAg}}_4$${\mathrm{I}}_5$. It is shown that the small value of the self-trapped electron diffusion coefficient (${\mathit{D}}_{\mathrm{st}}$≃1×${10}^{\mathrm{-}8}$ ${\mathrm{cm}}^2$/sec) limits the kinetics of the process of creation of Schottky barriers.

• Received 14 January 1994

DOI:https://doi.org/10.1103/PhysRevB.50.2444