Our previous work on finite-frequency shot noise S(ω) in a correlated tunneling current has been extended to investigate the shot-noise behavior in a single-electron transistor (SET), with emphasis on asymmetric SET. We found that both the increase of the asymmetry and the increase of the gate voltage will broaden S(ω), and S(0) is further suppressed by the gate capacitance. At low bias voltage, a condition is obtained under which the noise spectrum S(ω) is white (frequency-independent). We have also demonstrated at the quantitative level how the signal-to-noise ratio in a SET can be controlled by adjusting the gate voltage and the degree of asymmetry.

• Received 14 March 1994

DOI:https://doi.org/10.1103/PhysRevB.50.1595