A series of sharp new infrared-absorption bands produced by high-energy-electron irradiation in phosphorus- and arsenic-doped float-zone-refined silicon is reported. In P-doped silicon, the dominant band is at 1150 ${\mathrm{cm}}^{-1\mathrm{}}$, with associated weaker bands at 1310, 970, 1000, 1025, 1040, and 1450 ${\mathrm{cm}}^{-1\mathrm{}}$. In As-doped silicon, the corresponding bands are at 1260 ${\mathrm{cm}}^{-1\mathrm{}}$ and 1480, 1080, 1110, 1135, 1160, and 1650 ${\mathrm{cm}}^{-1\mathrm{}}$. The spectra recover in both materials at ∼140°C. Uniaxial-stress studies of these bands in oriented single crystals with polarized light are described. The results cannot be fit to the usual "piezospectrospic" classification of Kaplyanskii and Runciman. A model is presented which identifies the spectra as electronic transitions from the orbital singlet ground state of a single anistropic donor defect to a manifold of bound large-orbit effective-mass excited states. Extension of the Kaplyanskii classification to include the accidental degeneracy inherent in the effective-mass excited states in silicon explains the stress results. The symmetry of the defect is deduced to be monoclinic II. It is deduced that one or more group-V atoms are involved in the defect, but a microscopic identification of the defect is not possible.

• Received 17 June 1971

DOI:https://doi.org/10.1103/PhysRevB.5.510