Energy Bands and the Soft-X-Ray Absorption in Si

J. P. Van Dyke
Phys. Rev. B 5, 4206 – Published 15 May 1972
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Abstract

The contribution of transitions from the L shell to the imaginary part of the dielectric constant of silicon has been calculated including one-electron matrix elements. The inclusion of one-electron matrix elements does not resolve the discrepancy found between conduction-band density of states and soft-x-ray spectra. It is pointed out that, contrary to the claim of Kunz, the soft-x-ray data do not tell us the order of the zone-center levels in Si.

  • Received 29 November 1971

DOI:https://doi.org/10.1103/PhysRevB.5.4206

©1972 American Physical Society

Authors & Affiliations

J. P. Van Dyke

  • Sandia Laboratories, Albuquerque, New Mexico 87115

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Vol. 5, Iss. 10 — 15 May 1972

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