Density-of-states fine structure in the tunneling conductance of Y-Ba-Cu-O films: A comparison between experiment and theory

T. G. Miller, M. McElfresh, and R. Reifenberger
Phys. Rev. B 48, 7499 – Published 1 September 1993
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Abstract

With improved signal-averaging techniques, the tunneling conductance from pulsed-laser-deposited films of YBa2Cu3O7δ reveals a rich fine structure in both the subgap and near-gap regions. A comparison of this structure with calculations by Tachiki et al. yields excellent agreement and indicates the origin of the fine structure is the density of electronic states on the different layered planes of this high-Tc material.

  • Received 23 April 1993

DOI:https://doi.org/10.1103/PhysRevB.48.7499

©1993 American Physical Society

Authors & Affiliations

T. G. Miller, M. McElfresh, and R. Reifenberger

  • Department of Physics, Purdue University, West Lafayette, Indiana 47907

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Vol. 48, Iss. 10 — 1 September 1993

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