Luminescence from electron-irradiated sapphire

Kevin J. Caulfield, Ronald Cooper, and John F. Boas
Phys. Rev. B 47, 55 – Published 1 January 1993
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Abstract

Point defects have been produced by electron irradiation in single-crystal α-Al2O3 from two different sources. Time-resolved luminescence spectroscopy has been used to study emission spectra and atomic-displacement thresholds for the defects. An emission band at 3.8 eV is present in only one of the crystals while a band at 4.2 eV is observed in both crystals. The former is probably due to F+-center emission and the latter possibly arises from an F-center transition. Emission kinetics are consistent with detrapping of electrons from two shallow traps.

  • Received 16 July 1992

DOI:https://doi.org/10.1103/PhysRevB.47.55

©1993 American Physical Society

Authors & Affiliations

Kevin J. Caulfield and Ronald Cooper

  • Department of Chemistry, The University of Melbourne, Parkville, Victoria 3052, Australia

John F. Boas

  • Australian Radiation Laboratory, Lower Plenty Road, Yallambie, Victoria 3085, Australia

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Vol. 47, Iss. 1 — 1 January 1993

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