Molecular-dynamics study of single-electron charging in semiconductor wires

Kazuo Yano and David K. Ferry
Phys. Rev. B 46, 3865 – Published 15 August 1992
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Abstract

A molecular-dynamics technique is applied to single-electron charging effects in semiconductor wires, and the impact of strong electron-electron correlation on the conductance is investigated. Because of the relatively low electron density in semiconductors compared to a metal, the screening length is comparable to the sample size, which requires a treatment beyond the conventional Coulomb-blockade argument using macroscopic capacitance. Based on the molecular-dynamics method, most features of the periodic conductance oscillation in the double-barrier system are reproduced, and the feasibility of this technique in single-electron charging phenomena is demonstrated. Experimental observation of an activation energy smaller than the threshold energy of the nonlinear conductance, which the normal Coulomb-blockade model cannot explain, is reproduced in the present approach. This effect is due to the strong microscopic correlation, so that this is essential to describe accurately the single-electron charging effects in semiconductor systems.

  • Received 24 February 1992

DOI:https://doi.org/10.1103/PhysRevB.46.3865

©1992 American Physical Society

Authors & Affiliations

Kazuo Yano

  • Center for Solid-State Electronics Research, Arizona State University, Tempe, Arizona 85287
  • Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan

David K. Ferry

  • Center for Solid-State Electronics Research, Arizona State University, Tempe, Arizona 85287

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Issue

Vol. 46, Iss. 7 — 15 August 1992

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